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| Final data SPP02N60C3 SPB02N60C3 VDS @ Tjmax RDS(on) ID P-TO263-3-2 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances 650 3 1.8 V A P-TO220-3-1 Type SPP02N60C3 SPB02N60C3 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4392 Q67040-S4393 Marking 02N60C3 02N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 C TC = 100 C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D puls EAS Symbol ID 1.8 1.1 5.4 50 0.07 1.8 20 30 25 -55... +150 W C A V mJ Value Unit A I D = 1.35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 1.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature VGS Ptot T j , T stg Page 1 2003-10-02 Final data Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 1.8 A, Tj = 125 C SPP02N60C3 SPB02N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=0.25A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=80, VGS=V DS V DS=600V, VGS=0V, Tj=25C, Tj=150C Symbol min. RthJC RthJA RthJA Tsold - Values typ. 35 max. 5 62 62 260 Unit K/W C Values typ. 700 3 0.5 2.7 7.3 9 max. 3.9 600 2.1 - Unit V A 1 50 100 3 nA Gate-source leakage current I GSS V GS=30V, VDS=0V V GS=10V, ID=1.1A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Page 2 2003-10-02 Final data Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V DD=420V, ID=1.8A, V GS=0 to 10V V DD=420V, ID=1.8A SPP02N60C3 SPB02N60C3 Values min. typ. 1.75 200 90 4 8.1 15.7 6 3 68 12 max. 70 30 ns pF S pF Unit Symbol g fs Ciss Coss Crss Conditions V DS2*I D*RDS(on)max, ID=1.1A V GS=0V, V DS=25V, f=1MHz Effective output capacitance, 4) Co(er) V GS=0V, V DS=0V to 480V td(on) tr td(off) tf V DD=350V, V GS=0/10V, ID=1.8A, RG=50 - - 1.6 3.8 9.5 5.5 12.5 - nC V(plateau) V DD=420V, ID=1.8A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Page 3 2003-10-02 Final data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.1 0.184 0.306 1.207 0.974 0.251 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 Unit Symbol Value typ. VSD t rr Q rr I rrm di rr/dt VGS =0V, I F=IS VR =420V, IF=IS , diF/dt=100A/s SPP02N60C3 SPB02N60C3 Values min. typ. 1 200 1.3 9 max. 1.8 5.4 1.2 350 200 V ns C A A/s A Unit Symbol IS I SM Conditions TC=25C Unit 0.00002806 0.0001113 0.0001679 0.000547 0.001388 0.035 Ws/K Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2003-10-02 Final data 1 Power dissipation Ptot = f (TC) 28 SPP02N60C3 SPP02N60C3 SPB02N60C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25C 10 1 W 24 22 20 A Ptot 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 10 -1 ID 18 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ,ms DC C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 5.5 K/W A 4.5 V20 V10 V7 V6.5 V6 10 0 4 ZthJC ID 10 -1 3.5 3 2.5 2 1.5 1 V4.5 V5 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse V5.5 0.5 10 -3 -7 10 10 -6 V4 10 -5 10 -4 10 -3 s tp 10 -1 0 0 2 4 6 8 10 12 14 16 V 20 VDS Page 5 2003-10-02 Final data 5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 3 SPP02N60C3 SPB02N60C3 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 20 A 2.4 2.1 20V 8V 7V 6.5V 6V 4V 4.5V 5V 5,5V 16 RDS(on) 5.5V ID 14 12 10 6V 1.8 1.5 1.2 0.9 0.6 0.3 0 0 5V 8 4.5V 4V 6 4 2 0 6.5V 7V 8V 20V 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 5 10 15 V VDS 25 A ID 3 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 1.1 A, VGS = 10 V 17 SPP02N60C3 8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 5.5 14 A 25C 4.5 4 RDS(on) 12 10 ID 3.5 3 150C 8 6 4 2 0 -60 98% typ 2.5 2 1.5 1 0.5 -20 20 60 100 C 180 0 0 2 4 6 8 10 12 14 16 Tj Page 6 V 20 VGS 2003-10-02 Final data 9 Typ. gate charge VGS = f (QGate ) parameter: ID = 1.8 A pulsed 16 V SPP02N60C3 SPP02N60C3 SPB02N60C3 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 1 SPP02N60C3 A 12 VGS 0.2 VDS max 0.8 VDS max 10 0 8 6 IF 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 12 nC 10 -2 0 10 4 2 0 0 2 4 6 8 10 15 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Typ. drain current slope di/dt = f(R G), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=1.8A 1000 12 Typ. switching time t = f (RG ), inductive load, T j=125C par.: V DS=380V, VGS=0/+13V, ID=1.8 A 400 ns A/s di/dt(on) 300 di/dt 600 t 250 td(off) 200 400 150 100 200 50 di/dt(off) tf td(on) tr 0 0 40 80 120 160 200 RG 280 0 0 40 80 120 160 200 260 RG Page 7 2003-10-02 Final data 13 Typ. switching time t = f (ID), inductive load, T j=125C par.: VDS =380V, VGS=0/+13V, RG =50 90 SPP02N60C3 SPB02N60C3 14 Typ. drain source voltage slope dv/dt = f(RG), inductive load, Tj = 125C par.: V DS=380V, VGS=0/+13V, ID=1.8A 85000 tdoff ns 70 60 V/ns dv/dt 45000 t 50 40 dv/dt(on) 30 20 10 0 0.25 tf 25000 tdon tr dv/dt(off) 0.5 0.75 1 1.25 1.5 A ID 2 5000 0 40 80 120 160 200 RG 280 15 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, RG =50 0.01 16 Typ. switching losses E = f(RG), inductive load, Tj=125C par.: V DS=380V, VGS=0/+13V, ID=1.8A 0.0425 mWs mWs 0.008 0.0325 E E 0.007 Eon 0.0275 Eon 0.006 0.0225 0.005 0.0175 0.004 Eoff 0.0125 Eoff 0.003 0.0075 0.002 0.25 0.5 0.75 1 1.25 1.5 A ID 2 0.0025 0 40 80 120 160 200 RG 280 Page 8 2003-10-02 Final data 17 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 2 SPP02N60C3 SPB02N60C3 18 Avalanche energy EAS = f (Tj) par.: ID = 1.35 A, VDD = 50 V 50 A 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -3 10 -2 -1 0 1 2 4 mJ Tj(START) =25C EAS Tj(START) =125C IAR 30 20 10 10 10 10 10 10 s 10 tAR 0 20 40 60 80 100 120 C 160 Tj 19 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPP02N60C3 20 Avalanche power losses PAR = f (f ) parameter: E AR=0.07mJ 70 V W V(BR)DSS 680 50 660 640 620 600 20 580 560 540 -60 10 PAR 40 30 04 10 -20 20 60 100 C 180 10 5 Hz f 10 6 Tj Page 9 2003-10-02 Final data 21 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 1.8 SPP02N60C3 SPB02N60C3 22 Typ. Coss stored energy Eoss=f(VDS) pF J 10 3 1.4 Eoss V Ciss 1.2 1 C 10 2 0.8 0.6 0.4 Crss 10 1 Coss 0.2 0 0 10 0 0 100 200 300 400 600 100 200 300 400 V 600 VDS VDS Definition of diodes switching characteristics Page 10 2003-10-02 Final data P-TO-220-3-1 B 10 0.4 3.7 0.2 A 1.270.13 4.44 SPP02N60C3 SPB02N60C3 15.38 0.6 2.8 0.2 C 5.23 0.9 13.5 0.5 3x 0.75 0.1 1.17 0.22 2x 2.54 0.25 M 0.5 0.1 2.510.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-2 (D 2-PAK) 9.98 0.48 0.05 Page 11 2003-10-02 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPP02N60C3 SPB02N60C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 12 2003-10-02 |
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